MRFE6VP6300HR3_11 Datasheet, PDF (5/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS — PULSED
1000
C_iss
100
C_oss
10
1
C_rss
Measured with ±30 mV(rms)ac @ 1 MHz
V_GS = 0 Vdc
0.1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
60
P3dB = 56.0 dBm (398 W)
59
Ideal
P2dB = 55.8 dBm (380 W)
58
57 _{P1dB = 55.4 dBm}
(344 W)
56
55
Actual
54
V_DD = 50 Vdc, I_DQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
53
26 27 28 29 30 31 32 33 34
P_in, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Output Power versus
Input Power
29
90
V_DD = 50 Vdc, I_DQ = 100 mA, f = 230 MHz
28 _{Pulse Width = 100 μsec, 20% Duty Cycle}
80
27
70
26
60
25
50
G_ps
24
40
23
η_D
22
20
100
30
20
600
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
29
28
V_DD = 50 Vdc, I_DQ = 100 mA, f = 230 MHz
Pulse Width = 100 μsec, 20% Duty Cycle
27
26
25
24
50 V
23
45 V
40 V
22
21
35 V
20
V_DD = 30 V
19
0 50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
90
80
35 V
V_DD = 30 V
40 V ^{45 V} 50 V
70
60
50
40
V_DD = 50 Vdc, I_DQ = 100 mA, f = 230 MHz
30
Pulse Width = 100 μsec, 20% Duty Cycle
20
0 50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Drain Efficiency versus
Output Power
29
V_DD = 50 Vdc, I_DQ = 100 mA, f = 230 MHz
28 _{Pulse Width = 100 μsec, 20% Duty Cycle}
27
G_ps
26
25_C
25 _{TC = --30_C}
24
90
85_C ^25_C
80
--30_C ⁷⁰
60
50
40
23
85_C
30
22
η_D
20
21
10
10
100
600
P_out, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
5