MRFE6VP6300HR3_11 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
Document Number: MRFE6VP6300H
Rev. 1, 7/2011
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: V_DD = 50 Volts, I_DQ = 100 mA
Signal Type
P_out
(W)
f
G_ps
η_D
IRL
(MHz)
(dB)
(%)
(dB)
Pulsed (100 μsec, 300 Peak
230
20% Duty Cycle)
26.5
74.0
--16
MRFE6VP6300HR3
MRFE6VP6300HSR3
1.8--600 MHz, 300 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CW
300 Avg.
130
25.0
80.0
--15
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
• 300 Watts CW Output Power
• 300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
• Capable of 300 Watts CW Operation
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 V_DD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
CASE 465M--01, STYLE 1
NI--780--4
MRFE6VP6300HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRFE6VP6300HSR3
RF_in/V_GS 3
1 RF_out/V_DS
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Operating Junction Temperature ^(1,2)
Symbol
V_DSS
V_GS
T_stg
T_C
P_D
T_J
Value
--0.5, +130
--6.0, +10
--65 to +150
150
1050
5.26
225
Unit
Vdc
Vdc
°C
°C
W
W/°C
°C
RF_in/V_GS 4
2 RF_out/V_DS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case ⁽⁴⁾
Pulsed: Case Temperature 75°C, 300 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle,
50 Vdc, I_DQ = 100 mA, 230 MHz
CW: Case Temperature 87°C, 300 W CW, 50 Vdc, I_DQ = 1100 mA, 230 MHz
Symbol
Z_θJC
R_θJC
Value ^(2,3)
0.05
0.19
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Same test circuit is used for both pulsed and CW.
Unit
°C/W
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
1