MRF6V2300NBR1 Datasheet, PDF (5/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

1000
C_iss
TYPICAL CHARACTERISTICS
100
100
C_oss
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
10
C_rss
1
0
10
20
30
40
50
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
T_C = 25°C
1
1
10
100
V_DS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
10
9
V_GS = 3 V
8
7
6
2.75 V
5
2.63 V
4
2.5 V
3
2
1
2.25 V
0
0
20
40
60
80
100
120
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
28
27
I_DQ = 1350 mA
1125 mA
26
900 mA
25
650 mA
24
450 mA
23
V_DD = 50 Vdc
f1 = 220 MHz
22
10
100
600
P_out, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
−15
V_DD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
−20 Two−Tone Measurements, 100 kHz Tone Spacing
−25
−30
I_DQ = 450 mA
−35
650 mA
−40
−45
900 mA
1125 mA
−50
1350 mA
−55
1
10
100
600
P_out, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
60
P3dB = 55.76 dBm (377 W)
58
P1dB = 55.04 dBm (319 W)
56
54
Ideal
Actual
52
V_DD = 50 Vdc, I_DQ = 900 mA
f = 220 MHz
50
24
26
28
30
32
34
P_in, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
5