MRF6V2300NBR1 Datasheet, PDF (1/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: V_DD = 50 Volts, I_DQ = 900 mA,
P_out = 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2300N
Rev. 4, 12/2008
MRF6V2300NR1
MRF6V2300NBR1
10 - 600 MHz, 300 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
V_DSS
V_GS
T_stg
T_C
T_J
- 0.5, +110 Vdc
- 0.5, +10 Vdc
- 65 to +150 °C
150
°C
200
°C
RF_in/V_GS
RF_in/V_GS
RF_out/V_DS
RF_out/V_DS
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83°C, 300 W CW
Symbol Value ^(1,2) Unit
R_θJC
0.24
°C/W
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
1