MRF6S19060NR1_08 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16.6
27
16.5
η_D
G_ps
26.5
16.4
26
16.3
16.2
16.1
IRL
16
IM3
15.9
V_DD = 28 Vdc, P_out = 12 W (Avg.)
I_DQ = 610 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
25.5
25
− 30
− 10
− 36
− 14
− 42
− 18
15.8
− 48
− 22
15.7 _ACPR
− 54
− 26
− 60
− 30
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P_out = 12 Watts Avg.
16.2
38.5
G_ps
16.1 _ηD
38
16
37.5
15.9
15.8
15.7
IRL
15.6
15.5 ^IM3
V_DD = 28 Vdc, P_out = 24 W (Avg.)
I_DQ = 610 mA, 2−Carrier N−CDMA
2.5 MHz Carrier Spacing, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
37
36.5
− 20
− 10
− 25
− 14
− 30
− 18
15.4
− 35
− 22
15.3 ACPR
− 40
− 26
15.2
− 45
− 30
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P_out = 24 Watts Avg.
18
17 _{763 mA}
610 mA
16
458 mA
15
14 ^{305 mA}
I_DQ = 915 mA
13 _{VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz}
Two−Tone Measurements, 2.5 MHz Tone Spacing
12
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
− 10
V_DD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
− 20
− 30
915 mA
I_DQ = 305 mA
− 40
−50 _{458 mA}
763 mA
610 mA
− 60
1
10
100 200
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S19060NR1 MRF6S19060NBR1
5