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MRF6S19060NR1_08 Datasheet, PDF (12/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors | |||
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B
GATE LEAD
PACKAGE DIMENSIONS
E1
A
2X
E3
DRAIN LEAD
D1
D
4X
e
4X
b1
aaa M C A
2X
D2
c1
H
DATUM
PLANE
A1
A2
NOTE 7
4
D3
3
2X
E
F
ZONE J
2X
E2
E5
E4
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ
E5
BOTTOM VIEW
A
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6S19060NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5Mâ1994.
3. DATUM PLANE âHâ IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS âD" AND âE1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS âD" AND âE1" DO
INCLUDE MOLD MISMATCH AND ARE DETERâ
MINED AT DATUM PLANE âHâ.
5. DIMENSION âb1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE âb1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS âAâ AND âBâ TO BE DETERMINED AT
DATUM PLANE âHâ.
7. DIMENSION A2 APPLIES WITHIN ZONE âJ" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
INCHES
DIM MIN MAX
A .100 .104
A1 .039 .043
A2 .040 .042
D .712 .720
D1 .688 .692
D2 .011 .019
D3 .600 â â â
E .551 .559
E1 .353 .357
E2 .132 .140
E3 .124 .132
E4 .270 â â â
E5 .346 .350
F
.025 BSC
b1 .164 .170
c1 .007 .011
e
.106 BSC
aaa
.004
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
2.54 2.64
0.99 1.09
1.02 1.07
18.08 18.29
17.48 17.58
0.28 0.48
15.24 â â â
14 14.2
8.97 9.07
3.35 3.56
3.15 3.35
6.86 â â â
8.79 8.89
0.64 BSC
4.17 4.32
0.18 0.28
2.69 BSC
0.10
MRF6S19060NR1 MRF6S19060NBR1
12
RF Device Data
Freescale Semiconductor
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