MRF5P20180HR6 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS
15
40
14 G_ps
35
13
η_D
V_DD = 28 Vdc, P_out = 38 W (Avg.), I_DQ = 1600 mA
30
12
25
2−Carrier W−CDMA, 10 MHz Carrier Spacing
11
3.84 MHz Channel Bandwidth
20
10
IRL
9
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
−20
−10
−25
−15
8
−30
−20
7
IM3
−35
−25
6
−40
−30
ACPR
5
−45
−35
1840 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
16
15.5 I_DQ = 2400 mA
15 2000 mA
14.5 1600 mA
14
1200 mA
13.5
13
12.5 ^{800 mA}
12
11.5
11
1
V_DD = 28 Vdc
f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
−20
−25
−30 ^{3rd Order}
−35
−40 5th Order
−45
7th Order
−50
−55 ^VDD ^{= 28 Vdc, P}out ^{= 180 W (PEP), I}DQ ^{= 1600 mA}
Two−Tone Measurements, Center Frequency = 1960 MHz
−60
0.1
1
10
100
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
RF Device Data
Freescale Semiconductor
−20
V_DD = 28 Vdc
−25 f1 = 1955 MHz, f2 = 1965 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−30
I_DQ = 800 mA
−35
2400 mA
−40
−45
−50
2000 mA
−55
1600 mA
1200 mA
−60
1
10
100
1000
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
58
57
Ideal
56
P3dB = 54 dBm (251 W)
55
54
P1dB = 53.5 dBm (224 W)
53
Actual
52
51
50
49
48
47
V_DD = 28 Vdc, I_DQ = 1600 mA
46
Pulsed CW, 5 µsec(on), 1 msec(off)
45
Center Frequency = 1960 MHz
44
30 32 34 36 38 40 42 44 46
P_in, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
MRF5P20180HR6
5