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MRF5P20180HR6 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor | |||
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Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
â
â
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
â
â
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
â
â
1
µAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
â
3.6
â
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
â
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
â
5
â
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
â
1.7
â
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) (2) VDD = 28 Vdc, IDQ = 2 x 800 mA, Pout = 38 W Avg.,
f1 = 1932.5 MHz, f2 = 1942.5 MHz and f1 = 1977.5 MHz, f2 = 1987.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. Peak/Avg. =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
â
dB
Drain Efficiency
ηD
23
26
â
%
Intermodulation Distortion
IM3
â
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
ACPR
â
- 41
- 38
dBc
Input Return Loss
IRL
â
- 16
-9
dB
1. Each side of device measured separately. Part is internally matched both on input and output.
2. Measurements made with device in push - pull configuration.
MRF5P20180HR6
2
RF Device Data
Freescale Semiconductor
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