MRF21030LR5 Datasheet, PDF (5/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

f = 2170 MHz
Z_load
f = 2110 MHz
Z_o = 25 Ω
f = 2170 MHz
Z_source
f = 2110 MHz
V_DD = 28 V, I_DQ = 250 mA, P_out = 30 W PEP
f
MHz
Z_source
Ω
Z_load
Ω
2110
2140
15.3 -- j9.4
14.6 -- j9.4
3.7 -- j0.78
3.4 -- j0.37
2170
14.3 -- j8.8
3.0 + j0.13
Z_source = Test circuit impedance as measured from
gate to ground.
Z_load = Test circuit impedance as measured
from drain to ground.
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Z _source
Z _load
Figure 9. Series Equivalent Source and Load Impedance
RF Device Data
Freescale Semiconductor
MRF21030LR3 MRF21030LSR3
5