MRF21030LR5 Datasheet, PDF (4/9 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
60
--5
50
--10
IRL
40
--15
η
30 _{VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA}
--20
Two--Tone Measurement, 100 kHz Tone Spacing
20
G_ps
--25
10
--30
IMD
0
--35
2080
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
30
--20
V_DD = 28 Vdc, I_DQ = 250 mA, f = 2140 MHz
25 Channel Spacing (Channel Bandwidth):
--30
4.096 MHz (5 MHz)
20
--40
ACPR
15
--50
G_ps
η
10
--60
5
--70
0
1
2
3
4
5
6
P_out, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
--25
V_DD = 28 Vdc, f = 2140 MHz
--30
Two--Tone Measurement,
100 kHz Tone Spacing
--35
200 mA
--40
250 mA
--45
400 mA
300 mA
--50
350 mA
--55
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
16
400 mA
15
350 mA
300 mA
250 mA
14
200 mA
V_DD = 28 Vdc, f = 2140 MHz
Two--Tone Measurement, 100 kHz Tone Spacing
13
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
--20
V_DD = 28 Vdc, I_DQ = 250 mA, f = 2140 MHz
Two--Tone Measurement,
--30 _{100 kHz Tone Spacing}
3rd Order
--40
--50
5th Order
--60
7th Order
--70
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
15
--22
--24
14.5
--26
G_ps
--28
14
--30
IMD
--32
13.5
13
20
P_out = 30 W (PEP)
I_DQ = 250 mA, f = 2140 MHz
Two--Tone Measurement, 100 kHz Tone Spacing
22
24
26
28
30
32
V_DD, DRAIN VOLTAGE (VOLTS)
--34
--36
--38
34
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MRF21030LR3 MRF21030LSR3
4
RF Device Data
Freescale Semiconductor