MRF19060LR3 Datasheet, PDF (5/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
40
0
35
η
−5
30
−10
25
IRL
−15
20 ^{VDD = 26 Vdc}
−20
P_out = 60 W (PEP), I_DQ = 500 mA
15 ^{Two−Tone Measurement, 100 kHz Tone Spacing}
−25
10
G_ps
−30
5
IMD
−35
0
−40
1900 1920 1940 1960 1980 2000 2020
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
45
V_DD = 26 Vdc
40 _{IDQ = 700 mA, f = 1960 MHz, Channel Spacing}
(Channel Bandwidth): 885 kHz (30 kHz),
35 _{1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)}
30
2.25 MHz
25
885 kHz
20
1.25 MHz
15
η
G_ps
10
CDMA 9 Channels Forward
Pilot:0, Paging:1, Traffic:8−13, Sync:32
5
4
8
12
16
P_out, OUTPUT POWER (WATTS Avg.) CDMA
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
−20
−30
−40
−50
−60
−70
−80
−90
−100
20
−25
V_DD = 26 Vdc
−30 _{f = 1960 MHz}
Two−Tone Measurement, 100 kHz Tone Spacing
−35
−40
900 mA
−45
−50
700 mA
−55
500 mA
−60
−65
0.1
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
14
900 mA
13
700 mA
12
500 mA
11
V_DD = 26 Vdc
f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
10
0.1
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
−20
V_DD = 26 Vdc
−30 ^{IDQ = 700 mA, f = 1960 MHz}
Two−Tone Measurement, 100 kHz Tone Spacing
−40
3rd Order
−50
−60
5th Order
7th Order
−70
−80
0.1
1.0
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Products
versus Output Power
13.5
13
12.5
12
11.5
22
−22
P_out = 60 W (PEP), I_DQ = 500 mA
f = 1960 MHz
−24
Two−Tone Measurement, 100 kHz Tone Spacing
−26
−28
G_ps
−30
−32
IMD
−34
−36
24
26
28
30
V_DD, DRAIN VOLTAGE (VOLTS)
−38
32
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
RF Device Data
Freescale Semiconductor
MRF19060LR3 MRF19060LSR3
5