MRF19060LR3 Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 10 μAdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 300 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 500 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance ⁽¹⁾
(V_DS = 26 Vdc, V_GS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 60 W PEP, I_DQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
V_(BR)DSS
65
I_DSS
—
I_GSS
—
VGS_(th)
2
V_GS(Q)
2.5
V_DS(on)
—
C_rss
—
G_ps
11
Two - Tone Drain Efficiency
(V_DD = 26 Vdc, P_out = 60 W PEP, I_DQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
η
33
3rd Order Intermodulation Distortion
(V_DD = 26 Vdc, P_out = 60 W PEP, I_DQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IMD
—
Input Return Loss
(V_DD = 26 Vdc, P_out = 60 W PEP, I_DQ = 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
IRL
—
P_out, 1 dB Compression Point
(V_DD = 26 Vdc, P_out = 60 W CW, f = 1990 MHz)
1. Part is internally matched both on input and output.
P1dB
—
Typ
—
—
—
—
3.9
0.27
2.7
12.5
36
- 31
- 12
60
Max
Unit
—
Vdc
6
μAdc
1
μAdc
4
V
4.5
V
—
V
—
pF
—
dB
—
%
- 28
dBc
—
dB
—
W
MRF19060LR3 MRF19060LSR3
2
RF Device Data
Freescale Semiconductor