MMG3012NT1 Datasheet, PDF (5/12 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)

50 OHM TYPICAL CHARACTERISTICS
36
33
30
27
24
f = 900 MHz
1 MHz Tone Spacing
21
4.9
4.95
5
5.05
5.1
V_CC, COLLECTOR VOLTAGE (V)
Figure 8. Third Order Output Intercept Point
versus Collector Voltage
35
34
33
32
31
30
V_CC = 5 Vdc
29
f = 900 MHz
1 MHz Tone Spacing
28
−40 −20
0
20
40
60
80 100
T, TEMPERATURE (_C)
Figure 9. Third Order Output Intercept Point
versus Case Temperature
−30
−40
−50
−60
V_CC = 5 Vdc
−70
I_CC = 70 mA
f = 900 MHz
1 MHz Tone Spacing
−80
0
3
6
9
12
15
P_out, OUTPUT POWER (dBm)
Figure 10. Third Order Intermodulation versus
Output Power
10⁵
10⁴
10³
120 125
130
135
140
145
150
T_J, JUNCTION TEMPERATURE (°C)
NOTE: The MTTF is calculated with V_CC = 5 Vdc, I_CC = 70 mA
Figure 11. MTTF versus Junction Temperature
8
6
4
2
0
0
1
V_CC = 5 Vdc
I_CC = 70 mA
2
3
4
f, FREQUENCY (GHz)
Figure 12. Noise Figure versus Frequency
RF Device Data
Freescale Semiconductor
−20
V_CC = 5 Vdc
I_CC = 70 mA
−30 f = 2140 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−40
−50
−60
−70
2
4
6
8
10
12
14
16
P_out, OUTPUT POWER (dBm)
Figure 13. Single -Carrier W-CDMA Adjacent
Channel Power Ratio versus Output Power
MMG3012NT1
5