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MMG3012NT1 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor Technology (InGaP HBT)
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3012NT1 is a General Purpose Amplifier that is internally
input matched and internally output matched. It is designed for a broad
range of Class A, small - signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 0 to 6000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small -signal RF.
Features
• Frequency: 0 - 6000 MHz
• P1dB: 18.5 dBm @ 900 MHz
• Small-Signal Gain: 19 dB @ 900 MHz
• Third Order Output Intercept Point: 34 dBm @ 900 MHz
• Single 5 Volt Supply
• Internally Matched to 50 Ohms
• Low Cost SOT -89 Surface Mount Package
• Pb -Free and RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MMG3012NT1
Rev. 1, 8/2005
MMG3012NT1
0 - 6000 MHz, 19 dB
18.5 dBM
InGaP HBT
12 3
CASE 1514-01, STYLE 1
SOT - 89
PLASTIC
Table 1. Typical Performance (1)
Characteristic
Symbol 900 2140 3500 Unit
MHz MHz MHz
Small-Signal Gain
(S21)
Gp
19 15.8 13.4 dB
Input Return Loss
(S11)
IRL -18 -20 -17 dB
Output Return Loss
(S22)
ORL -18 -12 -16 dB
Power Output @1dB P1db 18.5 19
Compression
18 dBm
Third Order Output
Intercept Point
IP3
34 32
1. VCC = 5 Vdc, TC = 25°C, 50 ohm system
31 dBm
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage (2)
VCC
7
V
Supply Current (2)
ICC
300
mA
RF Input Power
Pin
10
dBm
Storage Temperature Range
Tstg -65 to +150 °C
Junction Temperature (3)
TJ
150
°C
2. Continuous voltage and current applied to device.
3. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 70 mA, TC = 25°C)
Characteristic
Symbol
Value (4)
Thermal Resistance, Junction to Case
RθJC
85
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
°C/W
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MMG3012NT1
1