33990_06 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – Enhanced Class B Serial Transceiver

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V ≤ V_BAT ≤ 16 V, -40°C ≤ T_A ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with V_BAT = 13 V, T_A = 25°C. All positive currents
are into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380 Ω to GND, 3.6 nF to GND
BUS Load = 257 Ω to GND, 20.2 nF to GND
I_{BAT (OP1)}
–
I_{BAT (OP2)}
–
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
I_{BAT(BUS L1)}
–
I_{BAT(BUS L2)}
–
Sleep State Battery Current
V_SLEEP = 0 V
I_BAT(SLEEP)
–
3.0
22.4
1.1
6.4
38.2
mA
11.5
32
mA
3.0
8.5
µA
65
BUS
BUS Input Receiver Threshold ⁽⁷⁾
Threshold High (Bus Increasing until Rx ≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx ≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (V_BUS(IH) - V_BUS(IL), SLEEP = 0 V)
BUS-Out Voltage (Tx = 5.0 V, 257 Ω ≤ R_BUS(L) to GND ≤ 1380 Ω)
8.2 V ≤ V_BAT ≤ 16 V
4.25 V ≤ V_BAT ≤ 8.2 V
Tx = 0 V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V ≤ V_BUS ≤ 4.8 V
BUS Leakage Current
-2.0 V ≤ V_BUS ≤ 0 V (≥ 2.0 ms after Tx Falls to 0 V)
0 V ≤ V_BUS ≤ V_BAT
0 V ≤ V_BUS ≤ 8.0 V
BUS Thermal Shutdown ⁽⁸⁾ (Tx = 5.0 V, I_BUS = -0.1 mA)
Increase Temperature until V_BUS ≤ 2.5 V
BUS Thermal Shutdown Hysteresis ⁽⁹⁾
T_{BUS (LIM)} - T_{BUS (REEN)}
LOAD Input Current with Loss of Ground
V_LOAD = -18 V (see Figure 4)
BUS Input Current with Loss of Ground
V_BUS = -18 V (see Figure 4)
V_BUS(IH)
4.25
3.9
V_BUS(IL)
–
3.7
BUS_TH(SLEEP)
2.4
3.0
V_BUS(HYST)
0.1
0.2
V_{BUS (OUT1)}
V_{BUS (OUT2)}
V_{BUS (OUT3)}
I_{BUS (SHORT)}
6.25
V_BAT - 1.6
–
60
6.9
–
0.27
129
I_{BUS (LEAK1)}
-0.5
I_{BUS (LEAK2)}
-0.5
I_{BUS (LEAK3)}
–
T_{BUS (LIM)}
150
T_{BUS (LI MHYS)}
10
I_{LOAD (LOG)}
-1.0
I_{BUS (LOG)}
-1.0
-0.055
0.5
0.25
170
12
–
–
V
–
3.5
3.4
0.6
V
8.0
V_BAT
0.7
mA
170
mA
0.5
1.0
0.5
°C
190
°C
15
mA
0.1
mA
0.1
Notes
7. Typical threshold value is the approximate actual occurring switch point value with V_BAT = 13 V, T_A = 25°C.
8. Device characterized but not production tested for thermal shutdown.
9. Device characterized but not production tested for thermal shutdown hysteresis.
Analog Integrated Circuit Device Data
Freescale Semiconductor
33990
5