MC9S08LH64 Datasheet, PDF (41/44 Pages) Freescale Semiconductor, Inc – Advanced Information

Table 20. VREF Electrical Specifications (continued)
Num
Characteristic
21 RESERVED (Mode[1:0] 11)
Symbol
Min
Max
—
—
—
LCD Specifications
Unit
—
3.14 LCD Specifications
Table 21. LCD Electricals, 3-V Glass
#C
Characteristic
Symbol
1 D LCD Supply Voltage
2 D LCD Frame Frequency
3 D LCD Charge Pump Capacitance
4 D LCD Bypass Capacitance
5 D LCD Glass Capacitance
6
7
D V_IREG
8
D ^{VIREG TRIM Resolution}
9
D ^{VIREG Ripple}
10
11 ^D V_LCD Buffered Adder²
1 _{VIREG Max can not exceed VDD –.15 V}
2 _{VSUPPLY = 10, BYPASS = 0}
HRefSel = 0
HRefSel = 1
V_LCD
f_Frame
C_LCD
C_BYLCD
C_glass
V_IREG
HRefSel = 0
HRefSel = 1
Δ_RTRIM
—
—
I_Buff
Min
.9
28
—
—
—
.89
1.49
1.5
—
—
—
Typ
1.5
30
100
100
2000
1.00
1.67
—
—
—
1
Max
1.8
58
100
100
8000
1.15
1.85¹
—
.1
.15
Unit
V
Hz
nF
nF
pF
V
%
V_IREG
V
μA
3.15 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 22. Flash Characteristics
#
C
Characteristic
1
D
Supply voltage for program/erase
–40 °C to 85 °C
2
D Supply voltage for read operation
3
D Internal FCLK frequency¹
4
D Internal FCLK period (1/FCLK)
5
P Byte program time (random location)²
6
P Byte program time (burst mode)²
Symbol
Min
V_prog/erase
1.8
V_Read
1.8
f_FCLK
150
t_Fcyc
5
t_prog
t_Burst
Typical
—
—
—
—
9
4
Max
3.6
3.6
200
6.67
Freescale Semiconductor
MC9S08LH64 Series MCU Data Sheet, Rev. 4
PRELIMINARY-SUBJECT TO CHANGE WITHOUT NOTICE
Unit
V
V
kHz
μs
t_Fcyc
t_Fcyc
41