MRF1550NT1_08 Datasheet, PDF (4/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

TYPICAL CHARACTERISTICS
16
175 MHz
15
14
155 MHz
135 MHz
13
12
11
V_DD = 12.5 Vdc
10
10
20
30
40
50
60
70
80
P_out, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
80
70
155 MHz
60
175 MHz
50
135 MHz
40
V_DD = 12.5 Vdc
30
10
20
30
40
50
60
70
80
P_out, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
70
135 MHz
65
175 MHz
60
55
50
200
155 MHz
V_DD = 12.5 Vdc
P_in = 35 dBm
400
600
800
1000
1200
I_DQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
90
80
70
135 MHz
60
155 MHz
175 MHz
50
40
I_DQ = 500 mA
P_in = 35 dBm
30
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
80
155 MHz
70
175 MHz
135 MHz
60
50
40
200
80
70
60
V_DD = 12.5 Vdc
P_in = 35 dBm
400
600
800
1000
1200
I_DQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus
Biasing Current
155 MHz
175 MHz
135 MHz
50
I_DQ = 500 mA
P_in = 35 dBm
40
10
11
12
13
14
15
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1550NT1 MRF1550FNT1
4
RF Device Data
Freescale Semiconductor