MRF1550NT1_08 Datasheet, PDF(2/18 Page) Freescale Semiconductor, Inc

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MRF1550NT1_08 Datasheet, PDF (2/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 800 Î¼A)

Drain- Source On - Voltage

(VGS = 5 Vdc, ID = 1.2 A)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 4.0 Adc)

Dynamic Characteristics

Input Capacitance (Includes Input Matching Capacitance)

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

RF Characteristics (In Freescale Test Fixture)

Common- Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)

f = 175 MHz

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)

f = 175 MHz

Symbol

Min Typ Max

IDSS

IGSS

0.5

Unit

Î¼Adc

VGS(th)

Vdc

RDS(on)

0.5

Î©

VDS(on)

Vdc

Ciss

500

Coss

250

Crss

Gps

14.5

Î·

MRF1550NT1 MRF1550FNT1

RF Device Data

Freescale Semiconductor

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