MRF1517NT1 Datasheet, PDF (4/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 480 - 520 MHz
18
500 MHz
16
14
480 MHz
520 MHz
12
10
8
V_DD = 7.5 Vdc
6
1 2 3 4 5 6 7 8 9 10
P_out, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
80
70
480 MHz
60
50
500 MHz
40
520 MHz
30
20
V_DD = 7.5 Vdc
10
1 2 3 4 5 6 7 8 9 10 11
P_out, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
12
10
500 MHz
8
520 MHz
6
480 MHz
4
2
P_in = 27 dBm
V_DD = 7.5 Vdc
0
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
80
70 ^{480 MHz}
500 MHz
60
520 MHz
50
40
P_in = 27 dBm
V_DD = 7.5 Vdc
30
0
200
400
600
800
1000
I_DQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus Biasing Current
12
10
8
500 MHz
520 MHz
6
480 MHz
4
2
P_in = 27 dBm
I_DQ = 150 mA
0
5
6
7
8
9
10
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
80
70
480 MHz
500 MHz
60
520 MHz
50
40
P_in = 27 dBm
I_DQ = 150 mA
30
5
6
7
8
9
10
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1517NT1
4
RF Device Data
Freescale Semiconductor