MRF1517NT1 Datasheet, PDF (1/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Document Number: MRF1517N
Rev. 5, 9/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
D
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Features
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
• Excellent Thermal Stability
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
S
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1517NT1
520 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage ⁽¹⁾
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C ⁽²⁾
Derate above 25°C
Symbol
V_DSS
V_GS
I_D
P_D
Value
- 0.5, +25
± 20
4
62.5
0.50
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
T_stg
T_J
Symbol
- 65 to +150
150
Value ⁽³⁾
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
R_θJC
2
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
1. Not designed for 12.5 volt applications.
2.
Calculated based on the formula P_D =
TJ _– TC
R_θJC
3. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1517NT1
1