MRF1513NT1_0806 Datasheet, PDF (4/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

TYPICAL CHARACTERISTICS, 450 - 520 MHz
16
450 MHz
470 MHz
15
520 MHz
500 MHz
14
13
12
11
V_DD = 12.5 Vdc
10
0
1
2
3
4
5
P_out, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
70
520 MHz
470 MHz
60
450 MHz
50
500 MHz
40
30
V_DD = 12.5 Vdc
20
0
1
2
3
4
5
P_out, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
6
5
450 MHz
470 MHz
500 MHz
4
520 MHz
3
2
V_DD = 12.5 Vdc
1
P_in = 20.3 dBm
0
100
200
300
400
500
600
I_DQ, BIASING CURRENT (mA)
Figure 6. Output Power versus Biasing Current
5
4
3
450 MHz
2
470 MHz
520 MHz
500 MHz
1
P_in = 20.3 dBm
I_DQ = 50 mA
0
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
70
65 _{520 MHz}
60 ^{470 MHz}
500 MHz
55
450 MHz
50
45
V_DD = 12.5 Vdc
P_in = 20.3 dBm
40
0
100
200
300
400
500
600
I_DQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus
Biasing Current
80
470 MHz
70
520 MHz
60
450 MHz
50
500 MHz
40
30
P_in = 20.3 dBm
I_DQ = 50 mA
20
8
9
10 11 12 13 14 15 16
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1513NT1
4
RF Device Data
Freescale Semiconductor