MRF1513NT1_0806 Datasheet, PDF(2/16 Page) Freescale Semiconductor, Inc

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MRF1513NT1_0806 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

IDSS

Î¼Adc

Gate- Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

IGSS

Î¼Adc

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 60 Î¼A)

VGS(th)

1.7

2.1

Vdc

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

VDS(on)

0.65

Vdc

Dynamic Characteristics

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Ciss

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Coss

16.5

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Crss

2.2

Functional Tests (In Freescale Test Fixture)

Common- Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)

Gps

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)

Î·

MRF1513NT1

RF Device Data

Freescale Semiconductor

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