MC9S08QE128 Datasheet, PDF (34/52 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit

Electrical Characteristics
3.11.1 Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported
emissions levels.
Table 19. Radiated Emissions, Electric Field
Parameter
Symbol Conditions
Frequency
f_OSC/f_BUS
Level¹
(Max)
Unit
Radiated emissions,
electric field
V_{RE_TEM}
V_DD = TBD
T_A = +25^oC
package type
TBD
1 _{Data based on qualification test results.}
0.15 – 50 MHz
50 – 150 MHz
150 – 500 MHz
500 – 1000 MHz
IEC Level
SAE Level
TBD crystal
TBD bus
TBD
TBD
TBD
TBD
TBD
TBD
dBμV
—
—
3.11.2 Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale test method. The
measurement is performed with the microcontroller installed on a custom EMC evaluation board and running specialized EMC
test software designed in compliance with the test method. The conducted susceptibility is determined by injecting the transient
susceptibility signal on each pin of the microcontroller. The transient waveform and injection methodology is based on IEC
61000-4-4 (EFT/B). The transient voltage required to cause performance degradation on any pin in the tested configuration is
greater than or equal to the reported levels unless otherwise indicated by footnotes below Table 20.
Parameter
Table 20. Conducted Susceptibility, EFT/B
Symbol
Conditions
f_OSC/f_BUS
Result
Amplitude¹
(Min)
Unit
A
TBD
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
V_{CS_EFT}
V_DD = TBD
T_A = +25^oC
package type
TBD
TBD crystal
TBD bus
B
C
TBD
kV
TBD
D
TBD
1 _{Data based on qualification test results. Not tested in production.}
MC9S08QE128 Series Advance Information Data Sheet, Rev. 3
34
Freescale Semiconductor