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K51P81M100SF2V2 Datasheet, PDF (33/74 Pages) Freescale Semiconductor, Inc – K51 Sub-Family | |||
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Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Program Partition for EEPROM execution time
tpgmpart64k
tpgmpart256k
⢠64 KB FlexNVM
⢠256 KB FlexNVM
â
138
â
145
Set FlexRAM Function execution time:
tsetramff
⢠Control Code 0xFF
â
70
tsetram32k
tsetram64k
tsetram256k
⢠32 KB EEPROM backup
⢠64 KB EEPROM backup
⢠256 KB EEPROM backup
â
0.8
â
1.3
â
4.5
Byte-write to FlexRAM for EEPROM operation
teewr8bers Byte-write to erased FlexRAM location execution
â
175
time
Byte-write to FlexRAM execution time:
teewr8b32k
⢠32 KB EEPROM backup
â
385
teewr8b64k
teewr8b128k
teewr8b256k
⢠64 KB EEPROM backup
⢠128 KB EEPROM backup
⢠256 KB EEPROM backup
â
475
â
650
â
1000
Word-write to FlexRAM for EEPROM operation
teewr16bers Word-write to erased FlexRAM location
execution time
â
175
Word-write to FlexRAM execution time:
teewr16b32k
⢠32 KB EEPROM backup
â
385
teewr16b64k
teewr16b128k
teewr16b256k
⢠64 KB EEPROM backup
⢠128 KB EEPROM backup
⢠256 KB EEPROM backup
â
475
â
650
â
1000
Longword-write to FlexRAM for EEPROM operation
teewr32bers Longword-write to erased FlexRAM location
execution time
â
360
Longword-write to FlexRAM execution time:
teewr32b32k
teewr32b64k
teewr32b128k
teewr32b256k
⢠32 KB EEPROM backup
⢠64 KB EEPROM backup
⢠128 KB EEPROM backup
⢠256 KB EEPROM backup
â
630
â
810
â
1200
â
1900
Max.
â
â
â
1.2
1.9
5.5
260
1800
2000
2400
3200
260
1800
2000
2400
3200
540
2050
2250
2675
3500
Unit
Notes
ms
ms
μs
ms
ms
ms
μs
3
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
K51 Sub-Family Data Sheet, Rev. 1, 6/2012.
Freescale Semiconductor, Inc.
Preliminary
33
General Business Information
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