K40P144M100SF2_1109 Datasheet, PDF (33/78 Pages) Freescale Semiconductor, Inc – K40 Sub-Family Data Sheet

6.4.1.2
Peripheral operating requirements and behaviors
Flash timing specifications — commands
Table 21. Flash command timing specifications
Symbol
t_rd1blk256k
Description
Read 1s Block execution time
• 256 KB program/data flash
Min.
—
Typ.
—
Max.
1.7
Unit
Notes
ms
t_rd1sec2k Read 1s Section execution time (flash sector)
—
—
60
μs
1
t_pgmchk Program Check execution time
—
—
45
μs
1
t_rdrsrc Read Resource execution time
—
—
30
μs
1
t_pgm4 Program Longword execution time
—
65
145
μs
Erase Flash Block execution time
2
t_ersblk256k
• 256 KB program/data flash
—
435
3700
ms
t_ersscr Erase Flash Sector execution time
—
14
114
ms
2
Program Section execution time
t_pgmsec512
t_pgmsec1k
t_pgmsec2k
• 512 B flash
• 1 KB flash
• 2 KB flash
—
2.4
—
ms
—
4.7
—
ms
—
9.3
—
ms
t_rd1all Read 1s All Blocks execution time
—
—
1.8
ms
t_rdonce Read Once execution time
—
—
25
μs
1
t_pgmonce Program Once execution time
—
65
—
μs
t_ersall Erase All Blocks execution time
—
870
7400
ms
2
t_vfykey Verify Backdoor Access Key execution time
—
—
30
μs
1
t_swapx01
t_swapx02
t_swapx04
t_swapx08
Swap Control execution time
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
200
—
μs
—
70
150
μs
—
70
150
μs
—
—
30
μs
Program Partition for EEPROM execution time
t_pgmpart256k
• 256 KB FlexNVM
—
450
—
ms
Set FlexRAM Function execution time:
t_setramff
t_setram32k
t_setram256k
• Control Code 0xFF
• 32 KB EEPROM backup
• 256 KB EEPROM backup
—
70
—
μs
—
0.8
1.2
ms
—
4.5
5.5
ms
Byte-write to FlexRAM for EEPROM operation
t_eewr8bers Byte-write to erased FlexRAM location execution
—
175
260
μs
3
time
Table continues on the next page...
K40 Sub-Family Data Sheet Data Sheet, Rev. 6, 9/2011.
Freescale Semiconductor, Inc.
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