MC9RS08KB12 Datasheet, PDF (30/48 Pages) Freescale Semiconductor, Inc – MCU Block Diagram

Electrical Characteristics
Table 15. 10-Bit ADC Characteristics (V_REFH = V_DDAD, V_REFL = V_SSAD)
C Characteristic
Conditions
Symb
Min
Typ¹
Max
Unit
Comment
C Supply Current
ADLPC = 0
ADLSMP = 0
ADCO = 1
I_DDAD
—
0.582
1
mA
C ADC
Asynchronous
Clock Source
High Speed (ADLPC = 0)
Low Power (ADLPC = 1)
f_ADACK
2
3.3
1.25
2
5
MHz
3.3
t_ADACK =
1/f_ADACK
D Conversion
Short Sample (ADLSMP = 0) t_ADC
Time (Including
sample time)
Long Sample (ADLSMP = 1)
Sample Time Short Sample (ADLSMP = 0) t_ADS
D
Long Sample (ADLSMP = 1)
—
20
—
ADCK See reference
cycles manual for
—
40
—
conversion
time variances
—
3.5
—
ADCK
cycles
—
23.5
—
C Total
Unadjusted
Error
10-bit mode
8-bit mode
E_TUE
—
±1.5
±3.5 LSB²
Includes
quantization
—
±0.7
±1.5
T Differential
Non-Linearity
10-bit mode
8-bit mode
DNL
—
±0.5
±1.0 LSB²
—
±0.3
±0.5
Monotonicity and No-Missing-Codes guaranteed
C Integral
Non-Linearity
10-bit mode
8-bit mode
INL
—
±0.5
±1.0 LSB²
—
±0.3
±0.5
P Zero-Scale
Error
10-bit mode
8-bit mode
E_ZS
—
±1.5
±2.5
LSB² V_ADIN = V_SSA
—
±0.5
±0.7
P Full-Scale Error 10-bit mode
E_FS
—
±1
±1.5
LSB² V_ADIN = V_DDA
8-bit mode
—
±0.5
±0.5
D Quantization
Error
10-bit mode
8-bit mode
E_Q
—
—
±0.5 LSB²
—
—
±0.5
D Input Leakage
Error
10-bit mode
8-bit mode
E_IL
—
±0.2
±2.5 LSB² Pad leakage² *
—
±0.1
±1
R_AS
1 _{Typical values assume VDDAD = 5.0 V, Temp = 25 °C, fADCK = 1.0 MHz unless otherwise stated. Typical values are for reference}
only and are not tested in production.
2 _{Based on input pad leakage current. Refer to pad electricals.}
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
MC9RS08KB12 Series MCU Data Sheet, Rev. 3
30
Freescale Semiconductor