MRF8S9260HR3 Datasheet, PDF(3/14 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF8S9260HR3 Datasheet, PDF (3/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TA = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1700 mA, 920-960 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

260

IMD Symmetry @ 130 W PEP, Pout where IMD Third Order

Intermodulation ` 30 dBc

IMDsym

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

Gain Flatness in 40 MHz Bandwidth @ Pout = 75 W Avg.

Gain Variation over Temperature

(-30 Â°C to +85Â°C)

0.2

ÎG

0.024

Output Power Variation over Temperature

(-30 Â°C to +85Â°C)

ÎP1dB

0.0075

Unit

MHz

dB/Â°C

dBm/Â°C

RF Device Data

Freescale Semiconductor

MRF8S9260HR3 MRF8S9260HSR3

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