MRF8S9260HR3 Datasheet, PDF (1/14 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: V_DD = 28 Volts,
I_DQ = 1700 mA, P_out = 75 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
h_D
Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
940 MHz
960 MHz
18.8
36.0
18.7
37.0
18.6
38.5
6.3
-39.5
6.2
-38.6
5.9
-37.1
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 940 MHz, 380 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
• Typical P_out @ 1 dB Compression Point ] 260 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate- Source Voltage Range for Improved Class C Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8S9260H
Rev. 0, 12/2009
MRF8S9260HR3
MRF8S9260HSR3
920-960 MHz, 75 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465B-03, STYLE 1
NI-880
MRF8S9260HR3
CASE 465C-02, STYLE 1
NI-880S
MRF8S9260HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(1,2)
CW Operation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
-0.5, +70
-6.0, +10
32, +0
-65 to +150
150
225
280
1.5
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 75 W CW, 28 Vdc, I_DQ = 1800 mA
Case Temperature 80°C, 265 W CW, 28 Vdc, I_DQ = 1100 mA
R_θJC
0.37
0.31
°C/W
ăĂ1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S9260HR3 MRF8S9260HSR3
1