MRF1517T1 Datasheet, PDF (3/16 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

TYPICAL CHARACTERISTICS, 480 - 520 MHz
10
0
500 MHz
520 MHz
8
480 MHz
−5
6
4
2
V_DD = 7.5 Vdc
0
0
0.2
0.4
0.6
0.8
1.0
P_in, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
−10
−15
−20
−25
1
480 MHz
520 MHz
500 MHz
V_DD = 7.5 Vdc
2 3 4 5 6 7 8 9 10
P_out, OUTPUT POWER (WATTS)
Figure 3. Input Return Loss versus
Output Power
RF Device Data
Freescale Semiconductor
MRF1517T1
3