MRF1517T1 Datasheet, PDF (1/16 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

Freescale Semiconductor
Technical Data
Replaced by MRF1517NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
The MRF1517 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large - signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
D
Power Gain — 11 dB
Efficiency — 55%
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier
G
Information Available Upon Request
• Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
S
Document Number: MRF1517
Rev. 3, 5/2006
MRF1517T1
520 MHz, 8 W, 7.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage ⁽¹⁾
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C ⁽²⁾
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Not designed for 12.5 volt applications.
2.
Calculated based on the formula P_D =
TJ _– TC
R_θJC
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
Value
- 0.5, +25
± 20
4
62.5
0.50
- 65 to +150
150
Symbol
R_θJC
Value
2
Rating
1
Package Peak Temperature
260
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1517T1
1