MR2A16A_1 Datasheet, PDF (3/22 Pages) Freescale Semiconductor, Inc – 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

Table 2. Operating Modes
E¹
G¹
W¹ LB¹ UB¹
Mode
H
X
X
X
X
L
H
H
X
X
L
X
X
H
H
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X
L
L
H
L
X
L
H
L
L
X
L
L
L
NOTES:
1 _{H = high, L = low, X = don’t care}
2 _{Hi-Z = high impedance}
Not selected
Output disabled
Output disabled
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
V_DD
Current
I_SB1, I_SB2
I_DDA
I_DDA
I_DDA
I_DDA
I_DDA
I_DDA
I_DDA
I_DDA
Electrical Specifications
DQL[7:0]²
Hi-Z
Hi-Z
Hi-Z
D_Out
Hi-Z
D_Out
D_In
Hi-Z
D_In
DQU[15:8]²
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D_Out
D_Out
Hi-Z
D_In
D_In
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
3