MR2A16A_1 Datasheet, PDF (1/22 Pages) Freescale Semiconductor, Inc – 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM

Freescale Semiconductor
Data Sheet
Document Number: MR2A16A
Rev. 4, 6/2007
256K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
MR2A16A
44-TSOP
Case 924A-02
Introduction
The MR2A16A is a 4,194,304-bit magnetoresistive
random access memory (MRAM) device
organized as 262,144 words of 16 bits. The
MR2A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR2A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR2A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR2A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standard center power and ground SRAM
pinout.
The MR2A16A is available in Commercial (0˚C to
70˚C), Industrial (-40˚C to 85˚C) and Extended
(-40˚C to 105˚C) ambient temperature ranges.
Features
• Single 3.3-V power supply
• Commercial temperature range (0˚C to
70˚C), Industrial temperature range (-40˚C
to 85˚C) and Extended temperature range
(-40˚C to 105˚C)
• Symmetrical high-speed read and write with
fast access time (35 ns)
• Flexible data bus control — 8 bit or 16 bit
access
• Equal address and chip-enable access
times
• Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
• All inputs and outputs are
transistor-transistor logic (TTL) compatible
• Fully static operation
• Full nonvolatile operation with 20 years
minimum data retention
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