MC9RS08LA8 Datasheet, PDF (24/34 Pages) Freescale Semiconductor, Inc – MCU Block Diagram

Electrical Characteristics
Table 17. Flash Characteristics (continued)
Characteristic
Symbol
Min
Typical¹
Max
Unit
Byte program time
t_prog
20
—
40
μs
Mass erase time
Cumulative program HV time²
t_me
500
—
—
ms
t_hv
—
—
8
ms
Total cumulative HV time
(total of t_me & t_hv applied to device)
t_{hv_total}
—
—
2
hours
HVEN to program setup time
t_pgs
10
—
—
μs
PGM/MASS to HVEN setup time
t_nvs
5
—
—
μs
HVEN hold time for PGM
t_nvh
5
—
—
μs
HVEN hold time for MASS
t_nvh1
100
—
—
μs
V_PP to PGM/MASS setup time
t_vps
20
—
—
ns
HVEN to VPP hold time
V_PP rise time³
t_vph
20
t_vrs
200
—
—
ns
—
—
ns
Recovery time
t_rcv
1
—
—
μs
Program/erase endurance
T_L to T_H = –40 °C to 85 °C
—
1000
—
—
cycles
Data retention
t_{D_ret}
15
—
—
years
1 _{Typicals are measured at 25 °C.}
2 _{thv is the cumulative high voltage programming time to the same row before next erase. Same address can not be}
programmed more than twice before next erase.
3 _{Fast VPP rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad}
and cause permanent damage to the pad. External filtering for the V_PP power source is recommended. An example V_PP
filter is shown in Figure 17.
100 Ω
12 V
V_PP
1 nF
Figure 17. Example V_PP Filtering
MC9RS08LA8 Series MCU Data Sheet, Rev. 1
24
Freescale Semiconductor