MRFG35010 Datasheet, PDF(2/12 Page) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

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MRFG35010 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Table 3. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Saturated Drain Current

(VDS = 3.5 Vdc, VGS = 0 Vdc)

IDSS

Off State Leakage Current

(VGS = â0.4 Vdc, VDS = 0 Vdc)

IGSS

Off State Drain Current

(VDS = 12 Vdc, VGS = â1.9 Vdc)

IDSO

Off State Current

(VDS = 28.5 Vdc, VGS = â2.5 Vdc)

IDSX

GateâSource Cutâoff Voltage

(VDS = 3.5 Vdc, IDS = 15 mA)

VGS(th)

Quiescent Gate Voltage

(VDS = 12 Vdc, ID = 180 mA)

VGS(Q)

Power Gain

Gps

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

Output Power, 1 dB Compression Point

(VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz)

Drain Efficiency

(VDD = 12 Vdc, IDQ = 180 mA, Pout = 1.0 W Avg.,

f = 3.55 GHz)

P1dB

Adjacent Channel Power Ratio

(VDD = 12 Vdc, Pout = 1.0 W Avg., IDQ = 180 mA,

f = 3.55 GHz, WâCDMA, 8.5 P/A @ 0.01% Probability,

64 CH, 3.84 MCPS)

ACPR

Min

â1.2

â1.0

9.0

Typ

2.9

< 1.0

0.09

5.0

â0.8

â42

Max

Unit

Adc

100

ÂµAdc

1.0

mAdc

â0.7

Vdc

â0.5

Vdc

â40

dBc

MRFG35010

Freescale Semiconductor

Wireless RF Product Device Data

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