MRFG35010 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
• Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts,
I_DQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
• 10 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
MRFG35010
Rev. 6, 12/2004
MRFG35010
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D−02, STYLE 1
NI−360HF
Table 1. Maximum Ratings
Rating
Symbol
Drain−Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
P_D
Gate−Source Voltage
V_GS
RF Input Power
P_in
Storage Temperature Range
T_stg
Channel Temperature⁽¹⁾
T_ch
Operating Case Temperature Range
T_C
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Class A
Class AB
1. For reliable operation, the operating channel temperature should not exceed 150°C.
R_θJC
Value
15
28.3
0.19
−5
33
−65 to +175
175
−20 to +90
Value
5.3
4.8
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Freescale Semiconductor
Wireless RF Product Device Data
MRFG35010
5−1