MRF9100LR3 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Table 4. Electrical Characteristics (T_C = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Off Characteristics
Drain- Source Breakdown Voltage
(V_DS = 65 Vdc, V_GS = 0 Vdc)
Zero Gate Voltage Drain Current
(V_DS = 26 Vdc, V_GS = 0 Vdc)
Gate- Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
On Characteristics
I_DSS
—
I_DSS
—
I_GSS
—
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 500 μAdc)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 800 mAdc)
Drain- Source On - Voltage
(V_GS = 10 Vdc, I_D = 2 Adc)
Dynamic Characteristics ⁽¹⁾
V_GS(th)
2
V_GS(Q)
3
V_DS(on)
—
Reverse Transfer Capacitance
(V_DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V_GS = 0 Vdc)
Functional Tests (In Freescale Test Fixture)
C_rss
—
Output Power, 1 dB Compression Point, CW
(V_DD = 26 Vdc, I_DQ = 800 mA, f = 960 MHz)
Common- Source Amplifier Power Gain
(V_DD = 26 Vdc, P_out = 100 W CW, I_DQ = 800 mA,
f = 960 MHz)
P_1dB
100
G_ps
16
Drain Efficiency
(V_DD = 26 Vdc, P_out = 100 W CW, I_DQ = 800 mA,
f = 960 MHz)
η
47
Input Return Loss
(V_DD = 26 Vdc, P_out = 100 W CW, I_DQ = 800 mA,
f1 = 921 MHz and 960 MHz,
f2 = 940 MHz)
IRL
—
—
Third Order Intermodulation Distortion
IMD
—
(V_DD = 26 Vdc, P_out = 100 W PEP, I_DQ = 800 mA,
f = Full GSM Band 921 - 960 MHz, Tone Spacing = 100 kHz)
1. Part is internally matched both on input and output.
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
Typ
Max
—
10
—
1
—
1
Unit
μAdc
μAdc
μAdc
—
4
Vdc
—
5
Vdc
0.19
0.5
Vdc
1.0
—
pF
110
—
W
17
—
dB
51
—
%
dB
—
- 10
- 20
—
- 30
—
dBc
MRF9100LR3 MRF9100LSR3
2
RF Device Data
Freescale Semiconductor