MRF9100LR3 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies
from 921 to 960 MHz, the high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 26 volt base station equipment.
• On - Die Integrated Input Match
• Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts
Output Power, P1dB — 110 Watts
Power Gain @ P1dB — 16.5 dB
Efficiency @ P1dB — 53%
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz,
100 Watts CW Output Power
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF9100
Rev. 5, 5/2006
MRF9100LR3
MRF9100LSR3
900 MHz, 110 W, 26 V
GSM/EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF9100LR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CASE 465A - 06, STYLE 1
NI - 780S
MRF9100LSR3
Symbol
V_DSS
V_GS
P_D
T_stg
T_C
T_J
Symbol
R_θJC
Value
- 0.5. +65
- 0.5. +15
175
1.0
- 65 to +150
150
200
Value
1.0
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9100LR3 MRF9100LSR3
1