MRF9002NR2 Datasheet, PDF (2/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

Table 4. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
On Characteristics
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 20 μAdc)
V_GS(th)
2.4
—
4
Vdc
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 25 mAdc)
V_GS(Q)
3
—
5
Vdc
Drain - Source On - Voltage
(V_GS = 10 Vdc, I_D = 0.1 Adc)
V_DS(on)
—
0.3
—
Vdc
Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system)
Common - Source Amplifier Power Gain @ P1dB
(V_DD = 26 Vdc, I_DQ = 25 mA, f = 960.0 MHz)
G_ps
15
18
—
dB
Drain Efficiency @ P1dB
(V_DD = 26 Vdc, I_DQ = 25 mA, f = 960.0 MHz)
η
35
50
—
%
Input Return Loss @ P1dB
(V_DD = 26 Vdc, I_DQ = 25 mA, f = 960.0 MHz)
IRL
—
- 15
-9
dB
Power Output, 1 dB Compression Point
(V_DD = 26 Vdc, I_DQ = 25 mA, f = 960.0 MHz)
P_1dB
34
37
—
dBm
MRF9002NR2
2
RF Device Data
Freescale Semiconductor