MRF9002NR2 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
Document Number: MRF9002NR2
Rev. 8, 5/2006
RF Power Field Effect Transistor Array
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 26 volt
base station equipment. The device is in a PFP - 16 Power Flat Pack package
which gives excellent thermal performances through a solderable backside
contact.
• Typical Performance at 960 MHz, 26 Volts
Output Power — 2 Watts Per Transistor
Power Gain — 18 dB
Efficiency — 50%
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
Features
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
MRF9002NR2
1000 MHz, 2 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
16
1
CASE 978 - 03
PLASTIC
PFP - 16
N.C. ¹
N.C. 2
GATE1 3
N.C. 4
GATE2 5
N.C. 6
GATE3 7
N.C. 8
16 DRAIN 1−1
15 DRAIN 1−2
14 DRAIN 2−1
13 DRAIN 2−2
12 N.C.
11 DRAIN 3−1
10 DRAIN 3−2
9 N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Table 1. Maximum Ratings
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Total Dissipation Per Transistor @ T_C = 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
- 0.5, +65
- 0.5, + 15
4
- 65 to +150
150
Value ⁽¹⁾
Vdc
Vdc
W
°C
°C
Unit
Thermal Resistance, Junction to Case, Single Transistor
Table 3. Moisture Sensitivity Level
R_θJC
12
°C/W
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9002NR2
1