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MRF6V2300N Datasheet, PDF (2/8 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
TBD (Minimum)
Machine Model (per EIA/JESD22 - A115)
TBD (Minimum)
Charge Device Model (per JESD22 - C101)
TBD (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
260
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 110 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Drain - Source Breakdown Voltage
(ID = 150 mA, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10
IDSS
—
—
10
BVDSS
110
—
—
IGSS
—
—
10
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 800 μAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VGS(th)
—
2.4
—
VDS(on)
—
0.3
—
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.44
—
Coss
—
120
—
Ciss
—
282
—
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 220 MHz, CW
Power Gain
Gps
—
27
—
Drain Efficiency
ηD
—
68
—
Input Return Loss
IRL
—
- 17
—
Pout @ 1 dB Compression Point, CW
(f = 220 MHz)
P1dB
—
330
—
Unit
°C
Unit
μAdc
μAdc
Vdc
μAdc
Vdc
Vdc
pF
pF
pF
dB
%
dB
W
ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations
must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which
exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263
(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to
ensure proper mounting of these devices.
MRF6V2300N MRF6V2300NB
2
RF Device Data
Freescale Semiconductor