MRF6V2300N Datasheet, PDF (1/8 Pages) Freescale Semiconductor, Inc – N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 4, 10/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V_DD = 50 Volts, I_DQ = 900 mA,
P_out = 300 Watts
Power Gain — 27 dB
Drain Efficiency — 68%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW
Output Power
Features
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 225°C Capable Plastic Package
• RoHS Compliant
MRF6V2300N
MRF6V2300NB
PREPRODUCTION
10 - 450 MHz, 300 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300N
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NB
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature ^(1,2)
Table 2. Thermal Characteristics
Characteristic
V_DSS
V_GS
T_stg
T_J
Symbol
- 0.5, +110
- 6.0, +10
- 65 to +150
225
Value ⁽³⁾
Vdc
Vdc
°C
°C
Unit
Thermal Resistance, Junction to Case
Case Temperature TBD°C, TBD W CW
Case Temperature TBD°C, TBD W CW
R_θJC
TBD
TBD
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6V2300N MRF6V2300NB
1