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MRF1550NT1 Datasheet, PDF (2/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |||
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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 800 μA)
Drain - Source On - Voltage
(VGS = 5 Vdc, ID = 1.2 A)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.0 Adc)
Dynamic Characteristics
Input Capacitance (Includes Input Matching Capacitance)
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)
RF Characteristics (In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA)
f = 175 MHz
Symbol
Min Typ Max
IDSS
IGSS
â
â
1
â
â
0.5
VGS(th)
RDS(on)
VDS(on)
1
â
3
â
â
0.5
â
â
1
Ciss
Coss
Crss
â
â
500
â
â
250
â
â
35
Gps
â
14.5
â
η
â
55
â
Unit
μAdc
μAdc
Vdc
Ω
Vdc
pF
pF
pF
dB
%
MRF1550NT1 MRF1550FNT1
2
RF Device Data
Freescale Semiconductor
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