MRF1550NT1 Datasheet, PDF (1/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in
12.5 volt mobile FM equipment.
• Specified Performance @ 175 MHz, 12.5 Volts
Output Power — 50 Watts
Power Gain — 12 dB
Efficiency — 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• Broadband Demonstration Amplifier Information Available
Upon Request
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF1550N
Rev. 11, 9/2006
MRF1550NT1
MRF1550FNT1
175 MHz, 50 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264 - 09, STYLE 1
TO - 272 - 6 WRAP
PLASTIC
MRF1550NT1
Table 1. Maximum Ratings
CASE 1264A - 02, STYLE 1
TO - 272 - 6
PLASTIC
MRF1550FNT1
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C ⁽¹⁾
Derate above 25°C
V_DSS
V_GS
I_D
P_D
- 0.5, +40
± 20
12
165
0.50
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
T_stg
T_J
Symbol
- 65 to +150
200
Value⁽²⁾
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
R_θJC
0.75
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
260
1.
Calculated based on the formula P_D =
TJ _– TC
R_θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
1