MRF1535NT1_08 Datasheet, PDF(2/19 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF1535NT1_08 Datasheet, PDF (2/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Off Characteristics

Drain - Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 Î¼Adc)

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 400 Î¼A)

Drain - Source On - Voltage

(VGS = 5 Vdc, ID = 0.6 A)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2.0 Adc)

Dynamic Characteristics

Input Capacitance (Includes Input Matching Capacitance)

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz)

RF Characteristics (In Freescale Test Fixture)

Common - Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA)

f = 520 MHz

Symbol

Min Typ Max

Unit

V(BR)DSS

IDSS

IGSS

0.3

Vdc

Î¼Adc

VGS(th)

RDS(on)

VDS(on)

2.6

Vdc

0.7

Î©

Vdc

Ciss

Coss

Crss

250

150

Gps

â 13.5 â

Î·

MRF1535NT1 MRF1535FNT1

RF Device Data

Freescale Semiconductor

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