MRF1535NT1_08 Datasheet, PDF (18/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
11
Date
Feb. 2008
Description
• Changed DC Bias I_DQ value from 150 to 500 to match Functional Test I_DQ specification, p. 10
• Replaced Case Outline 1264 - 09 with 1264 - 10, Issue L, p. 1, 12 - 14. Removed Drain - ID label from top
view and View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact.
Renamed E2 with E3. Added Pin 7 designation. Corrected positional tolerance for bolt hole radius. Added
JEDEC Standard Package Number.
• Replaced Case Outline 1264A - 02 with 1264A - 03, Issue D, p. 1, 15 - 17. Removed Drain - ID label from
View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (Changed D2
and E2 dimensions from basic to .604 Min and .162 Min, respectively). Added dimension E3. Added Pin 7
designation. Corrected positional tolerance for bolt hole radius. Added JEDEC Standard Package Number.
• Added Product Documentation and Revision History, p. 18
MRF1535NT1 MRF1535FNT1
18
RF Device Data
Freescale Semiconductor