MRF1513NT1 Datasheet, PDF(2/16 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

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MRF1513NT1 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

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Table 4. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

On Characteristics

IDSS

IGSS

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 60 Î¼A)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

Dynamic Characteristics

VGS(th)

1.0

VDS(on)

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture)

Ciss

Coss

Crss

Common - Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)

Gps

Î·

Typ

1.7

0.65

16.5

2.2

Max

Unit

Î¼Adc

2.1

Vdc

MRF1513T1

RF Device Data

Freescale Semiconductor

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