MRF1513NT1 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET

Freescale Semiconductor
Technical Data
Replaced by MRF1513NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
D
• Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 11 dB
Efficiency — 55%
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
G
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
• Broadband UHF/VHF Demonstration Amplifier Information
Available Upon Request
S
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
Document Number: MRF1513
Rev. 7, 5/2006
MRF1513T1
520 MHz, 3 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C ⁽¹⁾
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1.
Calculated based on the formula P_D =
TJ _– TC
R_θJC
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
Value
- 0.5, +40
± 20
2
31.25
0.25
- 65 to +150
150
Symbol
R_θJC
Value
4
Rating
1
Package Peak Temperature
260
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Unit
°C/W
Unit
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF1513T1
1