MMZ25332B Datasheet, PDF (2/10 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

Table 4. Electrical Characteristics (V_CC1 = V_CC2 = V_BIAS = 5 Vdc, 2500 MHz, T_A = 25°C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Small--Signal Gain (S21)
Input Return Loss (S11)
G_p
25
26.5
—
IRL
—
--17
—
Output Return Loss (S22)
ORL
—
--17
—
Power Output @ 1dB Compression
P1dB
—
33
—
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
48
—
Noise Figure
Supply Current ⁽¹⁾
Supply Voltage ⁽¹⁾
Table 5. ESD Protection Characteristics
NF
—
5.8
—
I_CQ
356
390
412
V_CC
—
5
—
Test Methodology
Class
Human Body Model (per JESD22--A114)
3A
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD22--A113, IPC/JEDEC J--STD--020
1
260
1. For reliable operation, the junction temperature should not exceed 150°C.
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Unit
°C
V_CC1 V_CC1
P_DET
RF_in
RF_in
BIAS
CIRCUIT
V_CC2/RF_out
V_CC2/RF_out
V_CC2/RF_out
V_BA1
V_BA2
V_BIAS
Figure 1. Functional Block Diagram
V_CC1 V_CC1 P_DET
12 11 10
N.C. 1
RF_{in 2}
RF_in 3
9 V_CC2/RF_out
8 VCC2/RFout
7 VCC2/RFout
456
V_BA1 V_BA2 V_BIAS
Figure 2. Pin Connections
MMZ25332BT1
2
RF Device Data
Freescale Semiconductor, Inc.