MMZ25332B Datasheet, PDF (1/10 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

Freescale Semiconductor
Technical Data
Document Number: MMZ25332B
Rev. 0, 5/2012
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier
designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA
and LTE wireless broadband applications. It provides exceptional linearity for
LTE and W--CDMA air interfaces with an ACPR of --50 dBc at an output power
of up to 22 dBm, covering frequencies from 1800–2800 MHz. It operates from a
supply voltage of 3 to 5 volts. The amplifier is fully input matched, requires
minimal external matching on the output and is housed in a cost--effective,
surface mount QFN 3×3 package. The device offers state--of--the--art reliability,
ruggedness, temperature stability and ESD performance.
• Typical Performance: V_CC1 = V_CC2 = V_BIAS = 5 Volts, I_CQ = 400 mA
Frequency
P_out
(dBm)
G_ps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
2140 MHz
22
27.0
--50.0
7.0
W--CDMA
2620 MHz
21
26.0
--50.0
5.0
LTE
20 MHz
Features
• Frequency: 1800--2800 MHz
• P1dB: 33 dBm @ 2500 MHz
• Power Gain: 26.5 dB @ 2500 MHz
• OIP3: 48 dBm @ 2500 MHz
• EVM < 3% @ 26.5 dBm P_out, WiMAX (802.16e)
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
MMZ25332BT1
1800--2800 MHz, 26.5 dB
33 dBm
InGaP HBT
QFN 3×3
PLASTIC
Table 1. Typical CW Performance ⁽¹⁾
Characteristic
1800 2500 2800
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
G_p
27.6 26.5 25.0 dB
Input Return Loss
(S11)
IRL
--26 --17 --16 dB
Output Return Loss
(S22)
ORL
--9 --17 --16 dB
Power Output @
P1dB 32 33 32 dBm
1dB Compression
1. V_CC1 = V_CC2 = V_BIAS = 5 Vdc, T_A = 25°C, 50 ohm system,
CW Application Circuit
Table 2. Maximum Ratings
Rating
Symbol Value
Unit
Supply Voltage
V_CC
6
V
Supply Current
I_CC
1200
mA
RF Input Power
P_in
30
dBm
Storage Temperature Range
T_stg --65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
Case Temperature 92°C, V_CC1 = V_CC2 = V_BIAS = 5 Vdc
R_θJC
16
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ25332BT1
1