MHVIC915R2 Datasheet, PDF (2/14 Pages) Motorola, Inc – 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier

Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
T_stg
T_J
Symbol
R_θJC
Value
- 0.5, +65
- 0.5, +15
- 65 to +150
150
Value ⁽¹⁾
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
Driver Application
(P_out = 0.2 W CW)
Stage 1, 27 Vdc, I_DQ = 80 mA
Stage 2, 27 Vdc, I_DQ = 120 mA
15.1
5.1
Output Application
(P_out = 2.5 W CW)
Stage 1, 27 Vdc, I_DQ = 80 mA
Stage 2, 27 Vdc, I_DQ = 120 mA
15.8
5.0
GSM Application
(P_out = 15 W CW)
Stage 1, 26 Vdc, I_DQ = 50 mA
Stage 2, 26 Vdc, I_DQ = 140 mA
13.8
4.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
0 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3
240
°C
Table 5. Electrical Characteristics (T_C = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V_DD = 27 Vdc, I_DQ1 = 80 mA, I_DQ2 = 120 mA, f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability
on CCDF
Power Gain (P_out = 23 dBm)
G_ps
29
31
—
dB
Power Added Efficiency (P_out = 34 dBm)
PAE
—
21
—
%
Input Return Loss (P_out = 23 dBm)
IRL
—
- 12
-9
dB
Adjacent Channel Power Ratio (P_out = 23 dBm)
ACPR
—
- 60
- 55
dBc
Adjacent Channel Power Ratio (P_out = 34 dBm)
ACPR
—
- 50
—
dBc
Gain Flatness @ P_out = 23 dBm (865 MHz to 895 MHz)
G_F
—
0.2
0.4
dB
Bias Sense FET Drain Current
V_BSD = 27 V
V_{BIAS BSG} = V_{BIAS2 Q2} @ I_DQ2 = 120 mA
I_BSD
0.8
1.2
1.6
mA
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MHVIC915R2
2
RF Device Data
Freescale Semiconductor